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    Silicon Heterostructure Devices

    Series: English

    Supplies a comprehensive treatment of SiGe HBT device physics and second-order effects Addresses low-frequency and broadband noise, and linearity in SiGe HBTs Explores the development of complementary SiGe technologies for high-speed analog circuits Covers the impact of bandgap engineering on device behavior across temperature Discusses applications associated operating SiGe electronics in a radia

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    VOLUME

    English

    Hardback

    Supplies a comprehensive treatment of SiGe HBT device physics and second-order effects Addresses low-frequency and broadband noise, and linearity in SiGe HBTs Explores the development of complementary SiGe technologies for high-speed analog circuits Covers the impact of bandgap engineering on device behavior across temperature Discusses applications associated operating SiGe electronics in a radiation environment like space Includes coverage of reliability issues and thermal phenomena Si-based FETs, RTDs, and various optoelectronic devices are also addressed SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters. Subjects of the book : Engineering Electrical & Electronics Engineering Contents of the book : Contents Introduction The Big Picture; J.D. Cressler A Brief History of the Field; J.D. Cressler SiGe HBTs Overview: SiGe HBTs; J.D. Cressler Device Physics; J.D. Cressler Second-Order Effects; J.D. Cressler Low-Frequency Noise; G. Niu Broadband Noise; D.R. Greenberg Microscopic Noise Simulation; G. Niu Linearity; G. Niu pnp SiGe HBTs; J.D. Cressler Temperature Effects; J.D. Cressler Radiation Effects; J.D. Cressler Reliability Issues; J.D. Cressler Self-Heating and Thermal Effects; J-S. Rieh Device-Level Simulation; G. Niu SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg Heterostructure FETs Overview: Heterostructure FETs; J.D. Cressler Biaxial Strained Si CMOS; K. Rim Uniaxial Stressed Si MOSFET; S.E. Thompson SiGe-Channel HFETs; S. Banerjee Industry Examples at State-of-the-Art: Intel’s 90 nm Logic Technologies; S.E. Thompson Other Heterostructure Devices Overview: Other Heterostructure Devices; J.D. Cressler Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser IMPATT Diodes; E. Kasper and M. Oehme Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald Self-Assembling Nanostructures in Ge(Si)–Si Heteroepitaxy; R. Hull Optoelectronic Components Overview: Optoelectronic Components; J.D. Cressler Si–SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving Si–SiGe Quantum Cascade Emitters; D.J. Paul Appendices Properties of Silicon and Germanium; J.D. Cressler The Generalized Moll-Ross Relations; J.D. Cressler Integral Charge-Control Relations; M. Schröter Sample SiGe HBT Compact Model Parameters; R.M. Malladi



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