Modeling the Effective Mobility and the effective W and L dependence as well as the capacitances of an annular (circular) mosfet requires an analysis from first principles. That is what is presented in this monograph. Following the same line of reasoning also allows us to model the behavior of oval (racetrack) geometry mosfets. The oval (racetrack) geometry is modeled as a weighted average of a circular portion and a straight conventional rectangular portion of the total racetrack portion of the MOSFET. ADVANTAGES OF ANNULAR & OVAL MOSFETS: High Tolerance To Radiation And Total Ionization Dose Leakage Paths Are Greatly Reduced And Even Eliminated Hot Carrier Effects Are Significantly Reduced Flicker 1/f Noise Is Reduced