Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: (NATO Science Partnership Subseries: 3)

Series: NATO Science Partnership Subseries: 3

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.